# A. Given an MOS structure made of p-type Si( Na 1017 cm, relative permittivity of 11.7)...

###### Question:

a. Given an MOS structure made of p-type Si( Na 1017 cm, relative permittivity of 11.7) and SiO2 (thickness 200 À, relative permittivity of 3.9).Assume the work functions of the metal and semiconductor are equal. Find φ, wm (maximum depletion width), the threshold voltage, Vr, and the minimum value of MOS capacitance (Cmin). (15 points) VT Cin Wm Vr Cmin b. Describe several approaches to enhance the capacitance of MOS structures. (5 points)

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